| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a metal pattern in a semiconductor device, which can suppress the occurrence of defects of a photoresist pattern by preventing irregular reflection caused by the metal in forming the metal pattern in the semiconductor device, and simplify the manufacturing process. SOLUTION: The method for forming the metal pattern in the semiconductor device includes preparing a semi-finished substrate with a metal layer (12) for use as the metal pattern, performing a cleaning process (14) inducing oxidation over an upper surface of the metal layer (12) to form an anti-scattering reflection layer (15) over the upper surface of the metal layer (12), forming the photoresist pattern over the anti-scattering reflection layer (15), and etching the anti-scattering reflection layer (15) and the metal layer (12) exposed by the photoresist pattern to form the metal pattern. COPYRIGHT: (C)2008,JPO&INPIT
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