| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device by which latch up can be inhibited when a plurality of wells of different depths exist, and to provide its manufacturing method. SOLUTION: This semiconductor device includes a p-type silicon substrate 20, a shallow n well 34 formed in the silicon substrate 20, a shallow p well 30 formed in the silicon substrate 20 next to the shallow n well 34, and an n well 28 deeper than the p well 30 which is formed in the silicon substrate 20 next to the shallow p well 30. A p well 26 deeper than the p well 30 is formed in the silicon substrate 20 between the shallow p well 30 and the deep n well 28. COPYRIGHT: (C)2008,JPO&INPIT
|
