SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can improve operating reliability. SOLUTION: The semiconductor memory device is formed on the surface (001) of a semiconductor substrate 1; and is equipped with an n-type first MIS transistor 3 having a charge storage layer FG in which data retention is possible, and a memory cell block 21 including more than 3 of the first MIS transistors 3 in which current paths are connected in series. The direction along a source S to a drain D in the first MIS transistor 3 is parallel to either of the [001] direction and the [010] direction of the semiconductor substrate 1. COPYRIGHT: (C)2008,JPO&INPIT