发明名称 MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY
摘要 PROBLEM TO BE SOLVED: To reduce an inverted current when magnetization is inverted while maintaining the thermal stability of a magnetization free layer. SOLUTION: A magnetoresistive element is used to record information when a current is passed through layer surfaces of a layer laminate. The magnetoresistive element comprises a magnetization reference layer 11 having a magnetic anisotropy vertical to a film surface and having a fixed magnetization direction, a magnetization free layer 13 having a magnetic anisotropy vertical to the film surface and having a varying magnetization direction, and an intermediate layer 12 provided between the magnetization reference layer 11 and the magnetization free layer 13. The magnetization free layer 13 has a laminated layer structure having at least two ferroelectric layers 13A, and an interlayer coupling layer 13B provided between the ferroelectric layers 13A. The ferroelectric layers 13A are ferroelectrically coupled each other with the interlayer coupling layer 13B disposed therebetween. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008010590(A) 申请公布日期 2008.01.17
申请号 JP20060178615 申请日期 2006.06.28
申请人 TOSHIBA CORP 发明人 YOSHIKAWA MASAHISA;KITAGAWA EIJI;KISHI TATSUYA;YODA HIROAKI
分类号 H01L43/08;H01L21/8246;H01L27/105 主分类号 H01L43/08
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