| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving a punch-through breakdown voltage between the drain and source regions of a MOS transistor and achieving desired breakdown voltage characteristics of the MOS transistor. SOLUTION: In the semiconductor device, a p-type diffusion layer 5 is formed on an n-type epitaxial layer 3. In the p-type diffusion layer 5, an n-type diffusion layer 8 as a backgating region is formed. The n-type diffusion layer 8 is formed in a self-alignment manner using drain electrodes 12, 13. With this structure, the impurity concentration of the n-type diffusion layer 8 near the p-type diffusion layers 10, 11 as source regions can be increased. Then, the punch-through breakdown voltage between the drain and the source can be improved, thus achieving a desired breakdown voltage characteristic of the MOS transistor 1. COPYRIGHT: (C)2008,JPO&INPIT
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