| 摘要 |
PROBLEM TO BE SOLVED: To easily form a wiring having an air gap structure not depending on dense/coarse performance of a wiring without adding a complicated/long-time process. SOLUTION: A semiconductor device 1 is provided with cavities 20 formed by removing a first insulating film formed on a substrate; a second insulating film 13 positioned over the cavity 20 and formed on the first insulating film; and a wiring 17 formed via a barrier film 15 so as to reach the substrate from the wiring trench 14 formed on the second insulating film 13. The semiconductor device 1 is provided with a slit 18 continuing to the cavity 20 on the side wall of the wiring 17. The slit 18 reaching the first insulating film is formed on the side wall of the wiring 17 in a process of removing excessive materials of the second insulating film 13, and the first insulating film is removed from the slit 18 to form the cavity 20 on the region where the film is removed. COPYRIGHT: (C)2008,JPO&INPIT
|
