| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of a silicon oxide film which does not cause deterioration of characteristics of a semiconductor device due to a fall of dielectric strength, even if the silicon oxide film is formed by executing dehydrating condensation on semiconductor substrate having a recess formed thereon. SOLUTION: In the forming method of the silicon oxide film, a primary reactant is formed on the semiconductor substrate 22 having the recess 30 formed thereon, and then, dehydrating condensation is executed using at least an Si-containing gas as a material gas, thereby forming the silicon oxide films 34, 36. In this method, the silicon oxide films 34, 36 are formed on the semiconductor substrate, the silicon oxide film 34 formed on the surface is removed until at least one part is exposed in a portion 36 of the silicon oxide film formed in the recess 30 where the silicon oxide film is formed at a density lower than that of the silicon oxide film 34 formed on the surface, and subsequently, the Si-containing gas is supplied to the low-density silicon oxide film 36. COPYRIGHT: (C)2008,JPO&INPIT
|
