发明名称 Semiconductor device and manufacturing method of the same
摘要 When a nickel (Ni) layer is formed on an electrode pad made of aluminum-silicon (Al-Si) by an electroless plating method, prior to the precipitation of zinc (Zn) which becomes a catalyst, copper (Cu) is formed in the form of discontinuous spots or islands on the surface of the electrode pad, thereby providing a copper (Cu) thin layer.
申请公布号 US2008012128(A1) 申请公布日期 2008.01.17
申请号 US20070703153 申请日期 2007.02.07
申请人 FUJITSU LIMITED 发明人 MAKINO YUTAKA;OKAMOTO TADAHIRO;KURITA TAKAKI
分类号 H01L23/498;H01L21/60 主分类号 H01L23/498
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