发明名称 |
HIGHLY DENSE MONOLITHIC THREE DIMENSIONAL MEMORY ARRAY AND METHOD FOR FORMING |
摘要 |
A method to form a highly dense monolithic three dimensional memory array is provided. In preferred embodiments, conductive or semiconductor spacers can be formed, then used as hard masks to pattern underlying layers, forming features at sublithographic pitch. Methods of the invention minimize photomasking steps and thus simplify fabrication. |
申请公布号 |
WO2008008630(A2) |
申请公布日期 |
2008.01.17 |
申请号 |
WO2007US72301 |
申请日期 |
2007.06.28 |
申请人 |
SANDISK 3D LLC;YUAN, JACK;SAMACHISA, GEORGE |
发明人 |
YUAN, JACK;SAMACHISA, GEORGE |
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