| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device employing a vertical organic transistor and a vertical inorganic transistor, and exhibiting inverter characteristics. SOLUTION: The semiconductor device has a first electrode 31; first semiconductor layers 32, 34 on the first electrode 31; a third electrode 35 on the first semiconductor layers 32, 34; second semiconductor layers 36, 38 having a conductivity type different from that of the first semiconductor layers 32, 34, and provided on the third electrode 35; fifth electrode 39 inserted between the second semiconductor layers 36, 38; second electrode 33 inserted between the first semiconductor layers 32, 34; and fourth electrode 37 inserted between the semiconductor layers 36, 38. COPYRIGHT: (C)2008,JPO&INPIT
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