| 摘要 |
A semiconductor chip structure includes a top metal layer and an inter-layer dielectric under the top metal layer. The top metal layer includes a bonding pad area and a non-bonding pad area. The inter-layer dielectric includes at least one first via disposed under the bonding pad area, and a plurality of conventional second vias disposed under the non-bonding pad area. The size of the first via is much larger than the size of the second via to improve bonding pad reliability. The cross section of the first via is a rectangular, a square, or a polygonal. The top metal layer has a predefined thickness to improve a yield of a wire bonding.
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