| 摘要 |
A nonvolatile memory is provided to increase integration density, by being connected to an adjacent bit line after removing the conventional source line. According to a nonvolatile memory, a memory cell array(105) has a plurality of memory cells arranged in a matrix along rows and columns. The nonvolatile memory includes a plurality of first word lines, a plurality of second word lines and a plurality of bit lines. Each memory cell includes a first memory transistor and a second memory transistor. A gate electrode of the first memory transistor is connected to the first word line. A gate electrode of the second memory transistor is connected to the second word line. One of a source region and a drain region of the first memory transistor is connected to a first bit line. One of the source region and the drain region of the second memory transistor is connected to a second bit line. Each of the first bit line and the second bit line is provided to memory cells of adjacent columns in common. |
