| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain high light emitting efficiency when a light emitting element is made of nitride semiconductor, in a substrate for semiconductor light emitting elements that converts and emits a light generated by the mounted light emitting element, into a light with an optional color according to the included phosphor. <P>SOLUTION: A light emitting element 3 is mounted on substrate 2 as comprising an nGaN layer 4, a light emitting layer 5, and a pGaN layer 6. The substrate 2 is made of InGaN crystal, and it contains phosphors A1 and A2 made of europium (Eu) and terbium (Tb). Therefore, the phosphor A1 made of Eu emits a red light indicated by a reference symbol α1, the phosphor A2 made of Tb emits a green light indicated by a reference symbol α2. Accordingly, a blue color element indicated by a reference symbol α3 that is not absorbed in the substrate 2, and a white light can be generated. As a result, the crystal defect of the light emitting element 3 is reduced so as to obtain high light emitting efficiency. <P>COPYRIGHT: (C)2008,JPO&INPIT |
