发明名称 SEMICONDUCTOR DEVICE SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device substrate which suppresses peeling of a wiring layer insulating film in periphery. SOLUTION: A semiconductor device substrate as one embodiment of the invention comprises: a semiconductor device formed on the semiconductor device substrate; a first interlayer insulating film formed for covering the semiconductor device; a first wiring arranged in the first interlayer insulating film; a second interlayer insulating film including a first insulating film formed on the first interlayer insulating film, a second insulating film, and a third insulating film; a second wiring arranged in a second insulating film and a third insulating film; and a via plug for connecting the first wiring and the second wiring arranged in the first insulating film. In the periphery of the semiconductor device substrate, the end of the first insulating film is covered with the second insulating film. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008010770(A) 申请公布日期 2008.01.17
申请号 JP20060182231 申请日期 2006.06.30
申请人 TOSHIBA CORP 发明人 OKI TOMOHIRO
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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