| 发明名称 |
METHOD FOR MINIMIZING THE CORNER EFFECT BY DENSIFYING THE INSULATING LAYER |
| 摘要 |
The invention concerns a method for minimizing "corner" effects in shallow silicon oxide trenches, by densifying the silicon oxide layer after it has been deposited in the trenches. Said densification is preferably carried out by irradiating the layer under luminous radiation with weak wavelength.
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| 申请公布号 |
US2008014366(A1) |
申请公布日期 |
2008.01.17 |
| 申请号 |
US20070771657 |
申请日期 |
2007.06.29 |
| 申请人 |
SCHIAVONE PATRICK;GAILLARD FREDERIC |
发明人 |
SCHIAVONE PATRICK;GAILLARD FREDERIC |
| 分类号 |
C08J7/06;H01L21/76;H01L21/762 |
主分类号 |
C08J7/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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