NONVOLATILE SEMICONDUCTOR MEMORY AND ITS DRIVE METHOD

摘要

Provided is a NOR-type nonvolatile semiconductor memory capable of performing charge implantation into a charge accumulation layer by using an FN tunnel current without deteriorating high integration of a memory cell. The NOR-type nonvolatile semiconductor memory includes an island-shaped semiconductor layer formed on a semiconductor substrate. The island-shaped semiconductor layer includes nonvolatile semiconductor memory cells, each having a drain diffusion layer formed on the semiconductor layer, a source diffusion layer formed under the semiconductor layer, a charge accumulation layer formed via a gate insulating film on a channel region of the side wall sandwiched by the drain diffusion layer and the source diffusion layer, and a control gate formed on the charge accumulation layer. The nonvolatile semiconductor memory cells are arranged in a matrix. Bit lines connected to the drain diffusion layer are arranged in the column direction. Control gate lines are arranged in the row direction. Source lines connected to the source diffusion layer are arranged in the column direction.