| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of processing a via hole which can efficiently form a via hole reaching a bonding pad without generating metal contamination. <P>SOLUTION: In the method of processing the via hole, a wafer having a plurality of devices formed on the front surface of a substrate and a bonding pad formed on each of the devices is irradiated with a pulse laser through a rear surface of the substrate to form a via hole reaching the bonding pad. The processing method includes a first processed hole forming step of irradiating the rear surface of the substrate with a pulse laser beam in which a spot diameter is set at 0.75-0.9D where D is the diameter of a via hole to be formed and energy density per pulse is set at 40-60 J/cm<SP>2</SP>, thereby forming a blind hole up to the inside of a predetermined quantity from the front surface of the substrate; and a second processed hole forming step for irradiating the blind hole formed on the substrate with a pulse laser beam in which energy density per pulse is set at 25-35 J/cm<SP>2</SP>, thereby forming a via hole reaching the bonding pad on the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
