Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile control

摘要

The critical dimension (CD) of features formed during the fabrication of a semiconductor device may be controlled through the use of a dry develop chemistry comprising O₂, SO₂ and a hydrogen halide. For example, a dry develop chemistry comprising a gas comprising O₂ and a gas comprising SO₂ and a gas comprising HBr may be used to remove exposed areas of a carbon-based mask. The addition of HBr to the conventional O₂ and SO₂ dry develop chemistry enables a user to tune the critical dimension by growing, trimming and/or sloping the sidewalls and to enhance sidewall passivation and reduce sidewall bowing.