发明名称 |
Over-voltage protected semiconductor device fabrication |
摘要 |
In accordance with the principles of the invention, a semiconductor substrate is provided that has a first cell formed thereon. The first cell has first and second terminals or nodes and a control terminal or node and has a characteristic breakdown voltage across the first and second terminals. A voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the first cell characteristic breakdown voltage. The voltage sensing transistor provides a control signal to the terminal when the voltage across the first and second terminals exceeds the second element characteristic breakdown voltage.
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申请公布号 |
US2008012039(A1) |
申请公布日期 |
2008.01.17 |
申请号 |
US20060484879 |
申请日期 |
2006.07.11 |
申请人 |
ANDIGILOG, INC. |
发明人 |
CAVE DAVID;ALBERKRACK JADE H. |
分类号 |
H01L29/74;H01L29/423;H01L31/111 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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