发明名称 |
One-time-programmable anti-fuse formed using damascene process |
摘要 |
A semiconductor structure includes a semiconductor substrate, a power source, and a stacked structure over the semiconductor substrate and coupled to the power source. The stacked structure includes a bottom electrode, a top electrode, and an insulation layer between the top electrode and the bottom electrode, wherein the insulation layer has a breakdown voltage lower than a pre-determined write voltage provided by the power source and higher than a pre-determined read voltage provided by the power source.
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申请公布号 |
US2008012138(A1) |
申请公布日期 |
2008.01.17 |
申请号 |
US20060487849 |
申请日期 |
2006.07.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG MING-TSONG;ONG TONG-CHERN |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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