| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of setting the channel length, on resistance value, and the like of a MOS transistor to appropriate values and reducing the device size of the MOS transistor, and to provide a manufacturing method of the semiconductor device. SOLUTION: In the semiconductor device, for example in a p-channel MOS transistor 1 having an offset gate structure, LOCOS oxide films 20, 21 are formed between source and drain regions in an n-type epitaxial layer 3. Gate electrodes 14, 15 are formed so that they are arranged on the LOCOS oxide films 20, 21. Then, p-type diffusion layers 6, 7 as drain regions and p-type diffusion layers 12, 13 as source regions are formed with improved position precision to the gate electrodes 14, 15. COPYRIGHT: (C)2008,JPO&INPIT
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