| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method wherein a gate electrode having a doping layer which contains impurity ions in an appropriate concentration on the interface side with a gate insulation film is formed, while preventing the impurity ions from entering the base side of the gate electrode; and to provide a semiconductor device manufactured by the same. SOLUTION: First, a polysilicon gate electrode film 3 is formed on a semiconductor substrate 1 via the gate insulation film 2. Next, the gate electrode film 3 is processed by etching to form the gate electrode 3' having an inverse-tapered shape. Then, impurity ions are introduced into the gate electrode 3' by ion implantation in such a manner that the impurity ions may not reach the interface with the gate insulation film 2. Thereafter, a metal film 10 is formed on the gate electrode 3'. By conducting a heat treatment, the gate electrode 3' is fully silicidized. Then, the doping layer 3a" is formed on the interface side with the gate insulation film 2 of the fully silicidized gate electrode 3". Thereafter, an unreacted portion of the metal film 10 is removed. COPYRIGHT: (C)2008,JPO&INPIT
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