Semiconductor Devices

摘要

The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region ( 52 ) whose potential is floating is formed within a p^- type body region ( 28 ). The n type semiconductor region ( 52 ) is isolated from an n⁺ type emitter region ( 32 ) and an n^- type drift region ( 26 ) by the body region ( 28 ). Furthermore, a second electrode ( 62 ) is formed, so as to oppose to at least a part of the semiconductor region ( 52 ) via an insulator film ( 64 ). The second electrode ( 62 ) does not oppose to the emitter region ( 32 ).