| 摘要 |
After depositing silicon nitride films on substrates held by a wafer boat in a reaction vessel and subsequently unloading the wafer boat from the reaction vessel, during a time frame from at a point of time when the wafer boat starts to be loaded into the reaction vessel to a point of time when the loading and unloading port of the reaction vessel is closed when the wafer boat holding unprocessed wafers to be processed next is loaded into the reaction vessel, the set temperature of the heaters for heating the reaction vessel are continuously raised. Thereby, temperature drop of the inner wall of the reaction vessel due to loading of a cold wafer boat is prevented, and as a result, unexpected peel-off of reaction products or reaction by-products adhering to the inner wall of the reaction vessel is prevented and contamination of unprocessed wafers by the peeled-off pieces is prevented.
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