SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

An n/p^-/p⁺ substrate where a p^--type epitaxial layer and an n-type epitaxial layer have been deposited on a p⁺-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p^--type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p^--type epitaxial layer from the substrate surface.