| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which can improve the stability of output, as well as a magnetic disk device using the same. <P>SOLUTION: An orientation control film 3 is formed on an alumina film 2 by a sputtering method. A Ti film, a Ta film, a Ru film, or a MgO film or the like is formed as the orientation control film 3. A lower shield layer 4 is formed on the orientation control film 3. In this case, crystal grains forming the lower shield layer 4 become prismatic. When the Ti film, the Ta film or the Ru film is formed as the orientation control film 3, the surface of the lower shield layer 4 becomes a (111) plane; and when the MgO film is formed as the orientation control film 3, it becomes a (100) plane. A GMR film 5 is formed on the lower shield layer 4. When forming the GMR film 5, an anti-ferromagnetic film is epitaxially grown on the lower shield layer 4 first. At this time, the anti-ferromagnetic film is reflected by the crystal structure of the lower shield film 4, its surface also becomes a (111) plane or a (100) plane. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
