发明名称 COMPOUND SEMICONDUCTOR SWITCH CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that a switch circuit device composed by serially connecting FETs in multiple stages needs the selection by a high frequency measurement before shipping because the DC test of each FET is impossible. SOLUTION: The switch circuit device connects switching elements on a first main surface of a substrate and electrode pads on second main surface through vias piercing the substrate and a vertical metal layer on its inner wall. The circuit device comprises testing electrode pads on the second main surface so that all the FETs' electrodes can be tested by a DC test of each FET, using outer terminal electrode pads and the testing electrode pads. This eliminates the selection by the high frequency measurement before shipping to reduce the man-hour for the measurement. The testing electrode pads have no bump electrodes to be outer terminals, this sufficing a small area and hence avoiding increasing the chip size. The wiring or the like on the mounting substrate is distant from the testing electrode pads enough to avoid leaking high frequency signals. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008010640(A) 申请公布日期 2008.01.17
申请号 JP20060179788 申请日期 2006.06.29
申请人 SANYO ELECTRIC CO LTD 发明人 ASANO TETSUO
分类号 H01L27/095;H01L21/338;H01L21/822;H01L27/04;H01L29/778;H01L29/812 主分类号 H01L27/095
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