发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To restrain a conductive layer from becoming highly resistive by constituting so as to prevent an air gap from occurring in a conductive layer in a hole. SOLUTION: A third conductive layer 16 is formed inside a second conductive layer 15 in a contact hole 7. Accordingly, even if the air gap exists inside the second conductive layer after forming the second conductive layer 15 along the inner face of the contact hole 7, it is possible to embed the air gap. Consequently, it is possible to restrain the second/third conductive layers 15, 16 from becoming highly resistive, and also, to reduce each resistance value of the second/third conductive layers 15, 16. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008010551(A) 申请公布日期 2008.01.17
申请号 JP20060178061 申请日期 2006.06.28
申请人 TOSHIBA CORP 发明人 NAKAMURA SHUICHI;KATADA TOMIO;FUKUHARA SEITA
分类号 H01L21/768;H01L21/28;H01L23/522 主分类号 H01L21/768
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