发明名称 REMOVING METHOD OF RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a removing method of a resist pattern in which the resist pattern where a cured layer is formed on a surface, can completely be removed by a processing using supercritical fluid. SOLUTION: The method is to remove the resist pattern 101 where the surface is covered with the cured layer A from a substrate 100. In a first process, the resist component 101a covered with the cured layer A is not dissolved, but a processing is performed for using supercritical fluid containing conversion agent having an operation for weakening adhesiveness of the cured layer A and the substrate 100, in a part where the cured layer A is brought into contact with the substrate 100. In a second process, a process is performed for using supercritical fluid containing organic solvent dissolving the resist component 101a. Thus, the cured layer A is lifted off and removed from the substrate 100. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008010533(A) 申请公布日期 2008.01.17
申请号 JP20060177689 申请日期 2006.06.28
申请人 SONY CORP 发明人 HIRANO EIKI;SAGA KOICHIRO
分类号 H01L21/027;G03F7/42 主分类号 H01L21/027
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