发明名称 |
Process for forming a short channel trench MOSFET and device formed thereby |
摘要 |
A process for forming a short channel trench MOSFET. The process includes forming a first implant at the bottom of a trench that is formed in the body of the trench MOSFET and forming a second or angled implant that is tilted in its orientation and directed perpendicular to the trench that is formed in the body of the trench MOSFET. The second implant is adjusted so that it does not reach the bottom of the trench. In one embodiment the angled implant is n-type material.
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申请公布号 |
US2008012068(A1) |
申请公布日期 |
2008.01.17 |
申请号 |
US20070710041 |
申请日期 |
2007.02.23 |
申请人 |
LEE ZACHARY;PATTANAYAK DEVA |
发明人 |
LEE ZACHARY;PATTANAYAK DEVA |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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