Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors

摘要

Traditionally, sol-gel silicates have been reported as being high temperature processable at 400 C to give reasonably dense films that showed good leakage current densities (<5x10^-8 A/cm²). Recently we have discovered that we are able to prepare films from particular combinations of sol-gel silicate precursors that cure at 135° C. to 250° C. and give good leakage current density values (9x10^-9 A/cm² to 1x10^-10 A/cm²) as well, despite the decrease in processing temperatures. These are some of the first examples of silicates being cured at lower temperatures where the leakage current density is sufficient low to be used as low temperature processed or solution processable or printable gate dielectrics for flexible or lightweight thin film transistors. These formulations may also be used in the planarization of stainless steel foils for thin film transistors and other electronic devices.