SUBRESOLUTION SILICON FEATURES AND METHODS FOR FORMING THE SAME

摘要

Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide (102) and exposing a silicon protrusion (124) to an isotropic etch, at least in the channel region. In one implementation, the protrusion (124) is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.