| 摘要 |
<p>A photoresist polymer is provided to ensure excellent transmissivity and low optical absorption in a short-wave light source and exhibit high etching resistance. A photoresist polymer includes a polymerization repeating unit represented by the following formula 1, wherein R is a C1-C10 straight or branched alkylene, C2-C10 alkylene comprising an ether group, or C2-C10 alkylene comprising an ester group, R1 is a hydrogen, C1-C10 straight or branched alkyl, C6-C20 cycloalkyl, C6-C20 cycloalkyl comprising a hydroxy group, C2-C10 alkyl comprising an ether group, or C2-C10 alkyl comprising an ester group, and a molar ratio of n, m, and o is 0.75-1.25 : 1 : 0.75-1.25.</p> |
