发明名称 |
METHOD FOR GROWING SILICON SINGLE CRYSTAL |
摘要 |
A method of growing a silicon single crystal. The method comprises growing a silicon single crystal by the Czochralski method under such conditions that a thermal stress is imposed on a side part of the silicon single crystal being grown. The atmospheric gas in which the single crystal is grown is a mixed gas comprising an inert gas and the gas of a hydrogen-atom-containing substance.
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申请公布号 |
KR20080007277(A) |
申请公布日期 |
2008.01.17 |
申请号 |
KR20077028614 |
申请日期 |
2005.12.01 |
申请人 |
SUMCO CORPORATION |
发明人 |
INAMI SHUICHI;TAKASE NOBUMITSU;KOGURE YASUHIRO;HAMADA KEN;NAKAMURA TSUYOSHI |
分类号 |
C30B29/06;C30B15/00;H01L21/20 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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