摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel sulfonic acid salt and its derivative which are suitably used as photoacid generators or the like for resist materials, particularly a sulfonic acid salt and its derivative which are suitably used as raw materials of photoacid generators or photoacid generators for resist materials since the elution into water on ArF liquid immersion exposure can be inhibited and the formation of foreign substances characteristic of the liquid immersion exposure is inhibited to effectively use them, a photoacid, a resist material using the same, and a pattern-forming method. <P>SOLUTION: The sulfonic acid salt is represented by formula (1) (wherein R<SP>1</SP>is a 1-20C alkyl group, a 6-15C aryl group or a 4-15C heteroaryl group and M<SP>+</SP>is a lithium ion, a sodium ion, a potassium ion, an ammonium ion or a tetramethylammonium ion). The sulfonic acid shows strong acidity due to the partial substitution of the α, β-positions with fluorines and, in addition, is easy to introduce various substituents into the sulfonic acid, and has a wide range of the design of molecules. Furthermore, the photoacid generator which generates such a sulfonic acid can be used in various steps of the device manufacturing process without any problem, inhibits the elution into water on ArF liquid immersion exposure, and reduces the influence of the water remaining on a wafer. Since the ester site is hydrolyzed under basic conditions, the conversion of the sulfonic acid to a low accumulating compound having a low molecular weight is possible by suitably treating the resist waste liquid, and the combustibility on combustion disposal is also high. <P>COPYRIGHT: (C)2008,JPO&INPIT |