| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of reducing the number of semiconductors to be used, reducing costs, and condensing light on a crystal semiconductor particle fully. <P>SOLUTION: In the photoelectric conversion device, a second-conductivity-type semiconductor section 3 is formed on a surface layer on a conductive substrate 1, a number of first-conductivity-type spherical crystal semiconductor particles 2 in which a first light-transmitting conductive layer 5 for covering a reflection prevention film 11 at the upper portion of the semiconductor sections 3 is formed are joined with an interval mutually, an insulating layer 4 is formed on a conductive substrate 1 between the crystal semiconductor particles 2, and current collection layer for making continuity with the first light-transmitting conductive layer 5 is formed on the insulating layer 4. In the current collection layer, a conductive electrode layer 10, and a second light-transmitting conductive layer 5' for making continuity with the first light-transmitting conductive layer 5 are laminated successively. <P>COPYRIGHT: (C)2008,JPO&INPIT |
