The power amplifier module comprises a laminate substrate comprising thermal vias and terminals, as well as a platform device with an interconnection substrate of a semiconductor material. This substrate is provided with electrical interconnects at a first side, and having been mounted on the laminate substrate with an opposite second side. Electrically conducting connections extend from the first to the second side through the substrate. A power amplifier device is attached to the second side of the substrate. One of the electrically conducting connection through the interconnection substrate is a grounding path for the power amplifier, while a thermal path is provided by the semiconductor material. There is an optimum thickness for the interconnection substrate, at which both a proper grounding and a acceptable thermal dissipation is effected.
申请公布号
WO2008007258(A2)
申请公布日期
2008.01.17
申请号
WO2007IB52290
申请日期
2007.06.15
申请人
NXP B.V.;BIELEN, JEROEN, A.;VAN KLEEF, MARCUS, H.;VAN STRATEN, FREERK, E.
发明人
BIELEN, JEROEN, A.;VAN KLEEF, MARCUS, H.;VAN STRATEN, FREERK, E.