| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively provide a high breakdown voltage NMOS having high breakdown voltage and high reliability, in a semiconductor integrated circuit device in which a low breakdown voltage NMOS and a high breakdown voltage NMOS are simultaneously integrated. SOLUTION: The device has a structure in which arsenic is used for high-concentration impurity of the low breakdown voltage NMOS, and phosphorous is used as high-concentration impurity of the high breakdown voltage NMOS. COPYRIGHT: (C)2008,JPO&INPIT
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