发明名称 MAGNETORESISTANCE EFFECT ELEMENT, ITS MANUFACTURING METHOD, MAGNETIC REPRODUCING ELEMENT AND MAGNETIC MEMORY
摘要 A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.
申请公布号 US2008013222(A1) 申请公布日期 2008.01.17
申请号 US20070773294 申请日期 2007.07.03
申请人 发明人 OKUNO SHIHO;OHSAWA YUICHI;HANEDA SHIGERU;KAMIGUCHI YUZO;KISHI TATSUYA
分类号 G11B5/39;B32B7/02 主分类号 G11B5/39
代理机构 代理人
主权项
地址
您可能感兴趣的专利