| 摘要 |
A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of In<SUB>x</SUB>Ga<SUB>(1-x)</SUB>N (0.01<=x<=0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of In<SUB>y</SUB>Ga<SUB>(1-y)</SUB>N (0<=y<=0.01) on the first barrier layer, and doped with an anti-defect agent including at least one of an N (nitrogen) element and a Si (silicon) element, a quantum well layer formed of In<SUB>z</SUB>Ga<SUB>(1-z)</SUB>N (0.25<=z<=0.35) on the first diffusion barrier layer, a second diffusion barrier layer formed of In<SUB>y</SUB>Ga<SUB>(1-y)</SUB>N (0<=y<=0.01) on the quantum well layer, and doped with an anti-defect agent including at least one of an N element and a Si element, and a second barrier layer formed of In<SUB>x</SUB>Ga<SUB>(1-x)</SUB>N (0.01<=x<=0.05) on the second diffusion barrier layer. The nitride-based semiconductor light emitting device may include an n-type semiconductor layer, the active layer, and a p-type semiconductor layer that are sequentially stacked on a substrate.
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