| 摘要 |
A self-pulsating semiconductor laser includes a lower clad layer formed on a semiconductor substrate, an active layer formed on the lower clad layer, the first upper clad layer formed on the active layer, a second upper clad layer formed on the first upper clad layer and a block layers. The second upper clad layer has a mesa structure. The block layers are formed on both sides of the second upper clad layer and includes a layer the bandgap thereof is larger than that of the active layer. When a self-pulsation is performed, saturable absorber regions are formed on the both sides of a gain region. The thickness d of the first upper clad layer satisfies a relation 220 nm<=d<=450 nm. A stable self-pulsation can be achieved in a wide temperature range.
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