发明名称 Low forward voltage drop transient voltage suppressor and method of fabricating
摘要 A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.
申请公布号 US2008013240(A1) 申请公布日期 2008.01.17
申请号 US20070820547 申请日期 2007.06.20
申请人 VISHAY GENERAL SEMICONDUCTOR, LLC 发明人 KAO LUNG-CHING;KUNG PU-JU;YU YU-JU
分类号 H02H3/22;H05K13/04 主分类号 H02H3/22
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