发明名称 |
FILM COMPOSITION DEPOSITED ON SUBSTRATE, AND ITS SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a film composition deposited on a substrate and its semiconductor device. SOLUTION: An initiation layer is formed by exposing a substrate to at least an adhesive material enough to be adsorbed by the material on the substrate. The initiation layer gives a first reactive region. The reactive region is made to chemically react with the first reactive material under an atomic layer deposition condition to form a second reactive region. The second reactive region is made to chemically react with a second reactive material under a process condition enough to form a reactive layer on the initiation layer. This process is repeated to form a continuous reactive layer on the initiation layer. The adhesive material comprising the initiation layer is used that does not deteriorate by atomic layer deposition method. The initiation layer forms a final film together with one or a plurality of reactive layers. COPYRIGHT: (C)2008,JPO&INPIT
|
申请公布号 |
JP2008010888(A) |
申请公布日期 |
2008.01.17 |
申请号 |
JP20070235523 |
申请日期 |
2007.09.11 |
申请人 |
MICRON TECHNOLOGY INC |
发明人 |
SANDHU GURTEJ;DERDERIAN GARO J |
分类号 |
C23C16/30;H01L21/285;C23C16/44;H01L21/28;H01L21/283;H01L21/316;H01L21/365;H01L21/768;H01L27/10;H01L29/51 |
主分类号 |
C23C16/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|