发明名称 FILM COMPOSITION DEPOSITED ON SUBSTRATE, AND ITS SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a film composition deposited on a substrate and its semiconductor device. SOLUTION: An initiation layer is formed by exposing a substrate to at least an adhesive material enough to be adsorbed by the material on the substrate. The initiation layer gives a first reactive region. The reactive region is made to chemically react with the first reactive material under an atomic layer deposition condition to form a second reactive region. The second reactive region is made to chemically react with a second reactive material under a process condition enough to form a reactive layer on the initiation layer. This process is repeated to form a continuous reactive layer on the initiation layer. The adhesive material comprising the initiation layer is used that does not deteriorate by atomic layer deposition method. The initiation layer forms a final film together with one or a plurality of reactive layers. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008010888(A) 申请公布日期 2008.01.17
申请号 JP20070235523 申请日期 2007.09.11
申请人 MICRON TECHNOLOGY INC 发明人 SANDHU GURTEJ;DERDERIAN GARO J
分类号 C23C16/30;H01L21/285;C23C16/44;H01L21/28;H01L21/283;H01L21/316;H01L21/365;H01L21/768;H01L27/10;H01L29/51 主分类号 C23C16/30
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