| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film capacitor structure having a hermetic passivation layer structure including a hydrogen barrier or gettering layer, and its manufacturing method. SOLUTION: The thin-film capacitor structure includes a substrate and a thin-film capacitor attached on the substrate which contains a pyrochlore or perovskite dielectric layer among many electrode layers. The electrode layer consists of a thin-film capacitor made of conductive thin-film materials, a pyrochlore or perovskite alkali earth titanate hydrogen-gettering barrier layer deposited on the thin-film capacitor and a silicon nitride layer deposited on the barrier layer, wherein the silicon nitride layer is deposited by plasma-enhanced chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition (LPCVD). COPYRIGHT: (C)2008,JPO&INPIT
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