| 发明名称 |
NITRIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor field-effect transistor which can be placed in normally off operation by controlling a threshold voltage. SOLUTION: The nitride semiconductor field-effect transistor has at its gate a channel comprising a double heterostructure which has an Al<SB>x</SB>Ga<SB>1-x</SB>N layer, a GaN layer, and an Al<SB>y</SB>Ga<SB>1-y</SB>N layer laminated in order in a +c direction of crystal orientation and is depleted by setting (x) and (y) in a relation of x≥y. COPYRIGHT: (C)2008,JPO&INPIT
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| 申请公布号 |
JP2008010803(A) |
申请公布日期 |
2008.01.17 |
| 申请号 |
JP20060247209 |
申请日期 |
2006.09.12 |
| 申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
SHIMIZU MITSUTOSHI;INADA MASAKI;OKUMURA HAJIME |
| 分类号 |
H01L21/338;H01L21/28;H01L29/417;H01L29/778;H01L29/78;H01L29/786;H01L29/812 |
主分类号 |
H01L21/338 |
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