| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam lithography device that does not recognize pattern dimension changes at a connection part as false defects, even if an optical defect inspection is supersensitized; and to provide an electron beam lithography method, and an electron beam lithography program. SOLUTION: The electron beam lithography method is used for lithographing a circuit pattern including a plurality of high-repetition regions on an object to be lithographed. The method is provided with a lithography region setting step in which the circuit pattern is dividingly set into a plurality of lithography regions, and a lithography step for lithographing in each lithography region. The high-repetition region includes more repetition patterns than the surroundings. In the lithography region setting step, the circuit pattern is dividingly set so that the boundary between lithography regions adjacent to each other is located between high-repetition regions adjacent to each other. COPYRIGHT: (C)2008,JPO&INPIT
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