发明名称 CIRCUIT DETERIORATION TESTING DEVICE AND CIRCUIT DETERIORATION TEST METHOD
摘要 PROBLEM TO BE SOLVED: To provide a circuit deterioration testing device and a circuit deterioration test method causing few failures of a driving source even when a high-temperature ion-migration resistance test is performed. SOLUTION: This circuit deterioration testing device 1 is equipped with a bending movement application mechanism 10 for bending repeatedly a distributing board 60 having flexibility, the driving source 31 for driving the bending movement application mechanism 10, a voltage application means 40 for applying a voltage between insulated circuits on the distributing board 60, an insulation resistance measuring means 50 for measuring an electric resistance between the insulated circuits on the distributing board 60, and a thermostat 35 storing the bending movement application mechanism 10. The driving source 31 is arranged outside the thermostat 35. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008008742(A) 申请公布日期 2008.01.17
申请号 JP20060179250 申请日期 2006.06.29
申请人 TOSHIBA CORP 发明人 MURO SEIDAIBI;HAPPOYA AKIHIKO
分类号 G01N3/34;G01N19/00;H05K3/00 主分类号 G01N3/34
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