| 摘要 |
Bottom electrode contact structures for a semiconductor assembly and a method for forming same are described. An exemplary semiconductor device comprises electrode contact structures in a phase change memory device. The phase change memory device comprising a phase change cell is made up of a bottom electrode contact structure comprising a phase change material liner connecting between a conductive top electrode and a conductive bottom electrode where the resulting ultra-small contacts are determined by the intersection of the sidewall bottom electrode and the phase change liner.
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