| 摘要 |
A method of forming a transistor involves defining an active area by defining isolation trenches, the isolation trenches being adjacent to the active area, and forming a gate electrode after defining the isolation trenches. The gate electrode is formed by etching a gate groove in the active area selectively with respect to an insulating material filling the isolation trenches, etching the insulating material filling the isolation trenches at a portion adjacent to a channel such that a portion of the channel having the shape of a ridge with a top side and two lateral sides is uncovered, providing a gate insulating material on the top side and the lateral sides, and providing a conducting material on the gate insulating layer such that the gate electrode is disposed along the top side and the two lateral sides of the channel.
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