| 摘要 |
The invention relates to a method and arrangement for carrying out the nondestructive determination of the connection quality of bonded wafers ( 1, 8 ) in order to verify the connection strength. The fact that an unbonded region ( 9 ) forms around a raised or recessed structure ( 3 ) on at least one of the connecting surfaces is made use of. The extension of the unbonded region is a measure of the strength of the wafer connection and is electrically determined by staggered contacts ( 5, 4 ) that, with the formation of the bond connection, close, only in part, via a contact strip ( 10 ).
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